Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25M) ammonia 25% and sodium selenosulphate (0.25M) in aqueous alkaline medium at 5°C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (E g ) to be 2.15eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10 −3 (Ωcm) −1 . Thermo-electric power measurement shows p-type conduction mechanism.