The lattice location of implanted silver in Si was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of radioactive 1 1 1 Ag at a dose of 2-3x10 1 2 cm - 2 , we identify around 30% of Ag on near-substitutional sites (~0.45 Å from ideal S-sites). Upon annealing at 200-300 o C, the fraction on near-S sites reaches a maximum around 60-80%. For higher annealing temperatures it decreases again and at 600 o C Ag starts to diffuse out of the Si samples. We estimate the activation energy for the dissociation of near-substitutional Ag to be 1.8-2.2 eV. The experimental results are compared to those of Cu in Si, and common features and characteristic differences in the behavior of the two group 1B metals are discussed.