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Passivation and functionalization via atomic hydrogen, hydrogen peroxide (H2O2(g)), and trimethylaluminum (TMA) on clean silicon–germanium (Si0.5Ge0.5(110) and Si0.47Ge0.53(001)) surfaces were studied and compared at the atomic level using ultra-high vacuum (UHV) scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and X-ray photoelectron spectroscopy (XPS) to understand the...
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