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The final goal of nanofabrication on Si wafers is the high-density integration of atomically controlled structures on the wafer scale. This paper describes a scenario for nanointegration through the control of the self-organization processes on the Si surfaces. It is demonstrated here that atomic steps on Si(111) surfaces can be regularly rearranged by using a patterning-assisted control and that...
The reaction sites operative for the CO oxidation and the translational temperature of desorbing product CO 2 were studied on Pt(112) = (s)3(111) (001) and Pt(113) = (s)2(111) (001) by means of angle-resolved thermal desorption combined with a cross-correlation time of flight technique. Heating of the co-adlayer of CO and oxygen yields five CO 2 formation peaks in the range of...
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