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The breakdown in surface morphology during the growth of an 8nm thick Ga 0.7 In 0.3 N 0.05 As 0.95 layer has been investigated by scanning tunnelling microscopy. During initial growth (<0.5nm) the alloy layer is planar but strained. Lateral composition modulation due to spinodal decomposition leads to the co-existence of tensile strained N-rich regions and compressively...
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