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A multilayer sample (C (23.3nm)/Ta (26.5nm)/C (22.7nm)/Si substrate) was submitted to AES depth profiling by Ar + ions of energy 1keV and angles of incidence of 72°, 78°, and 82°. The shapes of the as-measured depth profiles were strongly different emphasizing that the ion-bombardment conditions strongly affects the shapes of measured depth profiles. We simulated the depth profile measured...
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