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Novel structure models for the so-called C-type defect on Si(001) surfaces are proposed. The key idea in the models is a missing Si atom in the second surface layer. The proposed models are locally very stable and give STM images consistent with the observed one. The second subject is the analysis on the initial processes of the homoepitaxial crystal growth on Si(001) surfaces. The stability of several...
Ultrathin layers of cerium oxide on a Rh(111) surface develop an ordered array of surface defects when subjected to reducing conditions by annealing in vacuum. We show, using scanning tunneling microscopy images with atomic resolution and ab initio density functional theory calculations, that the defects are related to oxygen vacancies. It is suggested that the defect formation is facilitated by the...
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