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We investigated the distribution of tunneling current through ultrathin oxide films on Si(111) with an atomic force microscope having a conductive tip. We observed enhancement of the tunneling current at step edges for the oxide grown in dry O 2 at 600 o C, while the oxide grown in NHO 3 showed only small contrast over the surface. With analysis of the current-voltage characteristics,...
Using atomic force microscope (AFM) tip, local large-area oxide bumps were induced on a native SiO 2 layer applied with a static 10V in an ambient surrounding. It can be seen in the backscattered electron (BE) images that the oxide bumps were SiO x layer, not the native SiO 2 layer. Also, the spectra of energy dispersive X-ray spectrometer (EDS) displayed that the oxide bumps...
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