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Previous studies of the initial stage of oxidation on clean single crystal of Cu(100) have been extended to the case of the Cu(110) surface. The dynamic observation of the nucleation and growth of Cu oxide by means of in situ ultra high vacuum transmission electron microscopy (UHV-TEM) shows a highly enhanced oxidation rate on Cu(110) surface as compared to Cu(100). The kinetic data on the nucleation...
The evolution of buried structures of cobalt disilicide, which are formed in a Si(100) matrix by 400 keV Co + ion implantation at 875 K substrate temperature with subsequent rapid thermal annealing at 1275 K was studied by cross-sectional transmission electron microscopy (X-TEM). The analysis of identical samples with successive variations of the implanted doses and annealing times allows...
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