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The surface composition of Ge/Si(001)2x1 surfaces after atomic hydrogen (H) irradiation was investigated using IR reflection spectroscopy in UHV. It was confirmed that an extremely high dose of H at room temperature causes an etching reaction of the surface Ge layer. However, when H is irradiated at a temperature higher than 150 o C, the etching reaction does not occur; instead, Ge segregated...
We present first-principles total-energy calculations for Ge adsorption on the H-terminated Si(100) 2x1 surface. The configuration with Si atoms at the topmost surface has the lowest energy among the various configurations for all Ge coverages considered, implying that Si segregation takes place in Ge growth on H/Si(100). Since Si segregation is a kinetic process, although driven by energetics, we...
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