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We report on the characteristics of metal–insulator-semiconductor (MIS) capacitors with aluminum nitride (AlN) as the insulator material. AlN has been grown on (111) Si by means of molecular beam epitaxy (MBE) and DC magnetron sputtering (SPU). AlN layers have been characterized before and after dry thermal oxidation in O 2 . By analyzing changes in morphology and electrical properties, different...
We investigated the atomic structure of a surface layer forming at about 2/3 of a monolayer of InAs deposited on the GaAs(001)-c(4×4) surface using in situ scanning tunneling microscopy. The samples were grown by molecular beam epitaxy under arsenic-rich growth conditions at a temperature of about 450°C. We found a surface layer terminated by three arsenic top dimers oriented along the [110] direction—similar...
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