Conductive LaNiO 3 thin films were prepared on Si substrate by mist plasma evaporation and were used as bottom electrodes for BaTiO 3 thin films. The structure and electrical properties of BaTiO 3 thin films deposited on the metallic LaNiO 3 and Pt electrodes were comparatively investigated. The structure of BaTiO 3 film on LaNiO 3 /Si substrate was pseudocubic due to the lattice-matching growth, while the perovskite structure of the film on Pt/Ti/Si substrate was tetragonal. The dielectric constant of BaTiO 3 films with LaNiO 3 electrode was 167 at 100kHz, and was smaller than that grown on the Pt electrode.