The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the formation of graphane and partially hydrogenated graphene by electron irradiation of graphene having chemisorbed H 2 O and NH 3 . Graphane is formed by the irradiation of graphene that is mechanically exfoliated onto SiO 2 substrates in air at a relative humidity of 50%. Partially hydrogenated graphene is formed by the irradiation of graphene that is heated to remove adsorbates and then exposed to H 2 O or NH 3 gases. We propose that hydrogenation is due to H + ions and H radicals produced by the fragmentation of H 2 O and NH 3 adsorbates by impact with backscattered and secondary electrons. This effect could be used as a technique for writing graphane and partially hydrogenated graphene nanostructures on graphene using electron-beam lithography.