We have estimated the threshold current density for vertical cavity surface emitting lasers consisting of a 520 nm emitting ZnCdSe active layer, by taking account of optical gain as a function of bandgap energy and spontaneous lifetime. It has been clarified that laser operation is possible, if a high reflective mirror of reflectivities higher than 98% is realized. We have fabricated a SiO 2 /TiO 2 high reflectivity dielectric multilayer mirror for ZnSe-based vertical cavity surface emitting lasers. A photo-pumped ZnCdSe/ZnSe/ZnSSe vertical cavity has also been demonstrated using the SiO 2 /TiO 2 dielectric multilayer mirrors stacked with the ZnCdSe/ZnSe/ZnSSe structures. The linearly polarized cavity mode emission has been observed in the direction normal to the surface.