In this paper, we report the formation of stable icosahedral Al-Cu-Fe quasicrystalline thin films by thermal vapor deposition techniques (indirect heating and e-beam heating) from a single source. Deposition of these films by a single-source indirect heating method, in the stable icosahedral phase, is reported for the first time. A direct comparison between the two different heating methods has been made. The final compositions of the prepared films with desired properties were found to be Al 6 2 . 9 Cu 2 4 . 6 Fe 1 2 . 5 (indirect heating method) and Al 6 3 . 1 Cu 2 4 . 5 Fe 1 2 . 4 (e-beam method), respectively. The resistivities of the films prepared by both methods were ~2000μΩcm at room temperature and ~4000μΩcm at 10K.