The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Efficiency of Zr–Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr–Si diffusion barriers were deposited on the Si substrates by reactive magnetron sputtering with different negative substrate bias. The mass density of Zr–Si films increases with substrate bias voltage up to −150 V. The deposition rate decreased with the negative substrate bias from 5.4 nm/min to 1.8 nm/min. XRD measurements show that the Zr–Si barriers have amorphous structure in the as-deposited state. The FE-SEM images show that the sizes of spherical granules on the Zr–Si film surface increase with increasing the substrate bias. The Cu/Zr–Si/Si structures were prepared and annealed in Ar ambient at temperatures varying from 500 to 650 °C for an hour. It is shown from the comparison study that the Zr–Si film deposited with −150 V is better at maintaining good performance in Cu/Zr–Si/Si contact system than that of Zr–Si film deposited with −50 V.