In order to develop a diamond atomic force microscopy (AFM) probe with a piezoelectric sensor and actuator, we fabricated piezoelectric zinc oxide (ZnO) thin film and measured its piezoelectric constant. First, we developed a simple measurement method for the piezoelectric constant of the thin film, d 3 1 . This was based on the free vibration theory of cantilever beams. The values of d 3 1 were determined by measuring an electric charge induced in the piezoelectric thin film on the vibrating cantilever beam and its displacement. Using this method, we evaluated d 3 1 for ZnO thin film sputtered at various substrate temperatures. The ZnO thin film deposited at temperatures of less than 350 o C was highly c-axis oriented and showed a high piezoelectric constant d 3 1 of -3.5pC/N. Using this value, we calculated properties of the diamond cantilever AFM probes of various dimensions and of 5μm in thickness with a ZnO sensor and actuator of 1μm in thickness. The resolution of displacement and actuation force for a probe of 150μm in length and 50μm in width were estimated to be about 1.5nm at a resolution of charge measurement of 1x10 - 1 5 C and 7μN at an applied voltage of 10V, respectively.