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We report on a new method to produce self-assembled, unstrained, GaAs/AlGaAs quantum dots (QDs) with large confinement energy. First we create nanoholes on a GaAs surface by growing InAs islands on GaAs(001), overgrowing them with GaAs and etching the surface in situ with AsBr 3 gas. Then we transfer the holes to an AlGaAs surface, fill them with GaAs and overgrow them with AlGaAs. In this...
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