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L1 0 -FePt thin films were deposited on silicon substrates with the structure of Si/CrRu/MgO/FePt. The magnetic and microstructural properties were optimized by varying the FePt sputter pressure and temperature, as well as the thicknesses of all three layers. High coercivity films greater than 1.8T were grown when the FePt sputter pressure was at 1.33Pa with a thickness of only 4nm, on CrRu and MgO underlayers as thin as 10nm and 2nm, respectively.