Lead-free piezoelectric films with thickness larger than 1μm integrated on silicon substrates have been receiving considerable attention because of environmental concerns and their potential applications in microelectromechanical systems. We demonstrate that, by chemical solution deposition, it is possible to process (100)-predominant 1μm BaTiO 3 films on LaNiO 3 /Pt/TiO x /SiO 2 /Si substrates using thinner high-crystallinity columnar BaTiO 3 films as buffer layers. We point out that this kind of buffer layer prepared with a lower concentration solution on the surface of an LaNiO 3 /Pt electrode is effective in enhancing the crystallinity and orientation degree of final BaTiO 3 films prepared with a higher concentration solution. The 1μm BaTiO 3 films show good dielectric and insulating characteristics against an applied field, and the conduction current shows Schottky emission behavior at modest voltage and space-charge-limited behavior at higher voltage. We also demonstrate that the (100)-predominant 1μm BaTiO 3 films have excellent piezoelectric properties: piezoelectric coefficients d 33 higher than 50pm/V have been determined for the bare films using atomic force microscopy, which are comparable to those of Pb(Zr,Ti)O 3 films. These results indicate that the (100)-predominant BaTiO 3 films should be promising candidates for microelectromechanical systems applications.