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Magnetotransport data of step-edge junctions fabricated in magnetite (Fe 3 O 4 ) films are presented. An enhancement of the low field magnetoresistance of these step-edge junctions as evidenced by measurements with the electrical current along and across the step edges was observed. This is especially pronounced in a film on patterned MgAl 2 O 4 which additionally shows a significant geometrically induced resistivity anisotropy. The enhanced magnetoresistance might be caused by spin scattering at magnetically disordered regions near the step edges.