We propose a novel application of ''self-assembling'' one-dimensional semiconductor nanostructures for nanoscale electromechanical systems. A sacrificial layer of a GaAs/AlGaAs supperlattice under InAs wires preferentially grown on bunched steps on misoriented GaAs (110) surfaces was selectively etched to form semiconductor cantilevers that have typical lengths, widths, and thicknesses of 50-300, 20-100 and 10-20nm, respectively. The force constant, as measured by the force-modulation imaging technique using contact-mode atomic force microscopy, ranges from 0.5 to 10N/m, showing good agreement with that estimated from the elastic constant of InAs.