Partial substitution of Sn, Ge, or Si for Ni in LaNi 5 H x greatly enhances the stability under repeated hydrogen-cycling. Proton NMR relaxation measurements are reported here to determine the rates of H hopping in the substituted metals LaNi 4.6 M 0.4 H x with M=Sn, Ge, and Si, for comparison to bare LaNi 5 H x . The relaxation times T2* (FID), T 2 (Hahn echo), T 2 -CPMG, T 1 , and T 1ρ were determined from 130 to 375K. The three substituents result in only small increases in the average rate of motion at a given temperature but with a broader distribution of rates over the many inequivalent H sites and hopping paths. Evidently, the average energy barriers along the paths for H motion are only little affected by these substituents. Changes of H content x produce only minor changes in the relaxation times.