The interesting hydrogen sensing characteristics of two transistors with an Al 0.24 Ga 0.76 As (device A) and In 0.49 Ga 0.51 P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3ppm H 2 /air, a higher current variation of 7.79mA and a shorter adsorption time of 10.95s in a 9970ppm H 2 /air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14ppm H 2 /air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160°C. Because the Al 0.24 Ga 0.76 As and In 0.49 Ga 0.51 P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.