Amorphous carbon films were prepared by plasma CVD method using benzene gas on Si(100) wafers in a pulse-biased process. Internal compressive stress of pulse-biased films is low compared to that of DC-biased films and it depends on the pulse bias voltage. The compressive stress decreased from 0.6 to 0.25 GPa when the pulse bias voltage was reduced from -2 to -0.5 kV with a fixed duty ratio of 10%. Furthermore, the critical load for film adhesion increased with the decrease of the pulse bias voltage. Films prepared at a bias voltage of -0.5 kV endured the test at 20 N, and the friction coefficient was 0.015 and the wear rate was 2.0x10 - 8 mm 3 /Nm. The film deposited under a low pulse-biased voltage shows good tribological performance, especially in adhesion due to low compressive stress.