CuInS2 thin films were formed by the sequential deposition of In2S3–CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1h at 350°C and 400mPa. The morphology and thickness of the CuInS2 thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40nm, and thickness of 267 and 348nm for samples from 15 and 24h of deposition time in the chemical bath of In2S3, respectively. The energy band gap values of the films were around 1.4eV, whereas the electrical conductivity showed values from 64.91 to 4.11×10−3Ω−1cm−1 for the samples of 15 and 24h of In2S3 deposition bath, respectively. The obtained CuInS2 films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO2:F/CdS/Sb2S3/CuInS2/PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15h of In2S3 deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (Voc) of 530mV, short circuit current density (Jsc) of 2.43mAcm−2, and fill factor (FF) of 0.41. In the case of the structure with 24h of deposition of In2S3 bath, η=0.43% was measured with the following parameters: Voc=330mV, Jsc=4.78mAcm−2 and FF=0.27.