Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH 4 Cl at 425°C under a steady flow of NH 3 using small ramp rates <10°C/min, which is critical for obtaining a high yield and uniform distribution of nanowires. Tin nitride nanowires with diameters <100nm and lengths of 2–3μm were grown on Si and exhibited pronounced peaks in the X-ray diffraction corresponding to Sn rich Sn x N y (x>y) with a hexagonal structure, i.e. c=5.193Å, a=3.725Å. The excitation of the Sn x N y NWs with UV light of λ=300nm at T=300 and 77K gave a broad photoluminescence (PL) spectrum covering 450–750nm attributed to optical transitions between shallow and deep traps located within the band gap. These traps are most likely related to surface and nitrogen vacancy states. Time correlated, single photon counting PL measurements taken between 450 and 750nm, showed that the PL decay has a multi-exponential structure, suggesting the existence of complex, non-radiative relaxation paths with relaxation times that are found to become shorter at smaller wavelengths. Finally no significant differences were observed between the PL spectra of the Sn x N y and In doped Sn x N y NWs most likely due to the low level of incorporation of In attributed to differences in the ionic radii of In and Sn but also the larger energy and growth temperatures required for the formation of In–N bonds.