In this work tin doped indium oxide (ITO) thin films were deposited onto soda lime glass substrates by the direct current magnetron sputtering system analyzing process of deposition with optical emission spectroscopy (OES). The dependence of electro-optical characteristics of the deposited films on the sputtering pressure, O 2 /Ar working gas flow ratio and the discharge power was investigated. Transparency of the ITO films was measured using the ultraviolet and visible light spectrometer (UV–vis). The X-Ray photoelectron spectroscopy (XPS) method was applied for analysis of thin films surface chemical composition. It was found that in-situ measurement of plasma emission spectra allowed prediction and control of parameters of ITO thin films, namely resistivity and transparency. The correlation between the thin films resistivity, optical transparency and kinetics of deposition was examined.