The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Solid-phase crystallization at a surface of amorphous silicon and at an interface between amorphous silicon and a substrate was studied by laser Raman spectroscopy. Amorphous silicon was deposited on a fused silica substrate by a sputtering method. The thickness of the amorphous silicon film was about 3 μm. The samples were annealed at 700 or 1000 o C. Amorphous silicon crystallized faster at the surface than at the interface. The results were confirmed by characterization of the cross section by micro Raman spectroscopy. It was found from Raman shift of the polycrystalline silicon that the effect of the strain is to suppress crystallization.