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In this paper, we investigate the impact of the rear surface passivation, the silicon base material and the local aluminum contacts applied to rear side passivated solar cells with a homogenously doped emitter at the front. We compare different dielectric surface passivation layers (SiO2, Al2O3, SiNx) on a high-efficiency level using 125×125 mm2 and 156×156 mm2 p-type Cz silicon wafers. It turns out...
Atomic layer deposition (ALD) of thin Al2O3 (≤ 10nm) films is used to improve both front and rear surface passivation of large-area screen-printed p-type CZ Si passivated emitter and rear cells (PERC). As emitter passivation, the SiNx anti reflection coating (ARC) is capped with Al2O3, giving improved hydrogenation during co-firing and a front recombination current (J0,front) of 128 ± 5 fA/cm ...
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