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Surface recombination of minority charge carriers is a significant loss mechanism in crystalline-Si (c-Si) solar cells. For n+ (phosphorous) doped regions a sufficient surface passivation is achieved by using a silicon nitride (SiNX) film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). However, on p+ boron doped regions, SiNX does not passivate the surface. Instead, a stack of layers...
The pitch of the rear side laser contact opening (LCO) strongly influences the performance of n-type Passivated Emitter and Rear Totally diffused (n-PERT) solar cells. The rear emitter of a back junction (BJ) cell was formed by boron doping [1,2]. The considered n-PERT, BJ cell structure is based on a p-type passivated emitter and rear cell (p-PERC) process sequence [3] upgraded by a boron diffusion...
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