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Minority carrier lifetime measurements are a major characterization technique regarding the material quality of semiconductors. In particular, a large variety of electrically active defects can be detected at room temperature even if present in low concentrations down to 10 10 cm -3 only. Transient and (quasi) steady-state methods as well as combinations of both have been established...
Epitaxial emitters deposited by atmospheric pressure CVD have been studied using different characterization methods such as spreading resistance profiling (SRP) or electrochemical capacitance voltage profiling (ECV). Comparing simulations with measured data, very low minority carrier lifetimes of τeff = 20μs have been determined for FZ-material after a standard epitaxy process. LBIC measurements showed...
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