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Mono-cast silicon recently became available in volumes relevant for industrial scale production of solar cells. At the present time, mono-cast wafers are classified by an optical determination of the <100>-grain area on the wafer. This paper discusses solar cell efficiency distributions of mono-cast wafers which we obtained in first tests using an industrial cell process. A screening process...
In this work, an extensive characterisation of intrinsic amorphous silicon (a-Si) passivation layers deposited on n- and p-type silicon is reported. Low temperature capacitance-voltage measurements are utilised to enable parameter extraction from the c-Si/a-Si interface and a-Si bulk. Electron spin resonance enables atomic identification of defects present. Results reveal the presence of electrically...
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