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Selective laser ablation of silicon nitride (SiNx) layers is a crucial technological step to achieve alternative front side metallization like electrochemical contact. In this work, we discuss the mechanism of laser ablation with a nanosecond UV laser source. A model with two thresholds corresponding to the melting threshold of silicon and the ablation threshold of silicon nitride is proposed. A finite...
In this work, two silicon nitride (SiNx) layers with two different refraction indices, deposited on polished or damage-etched silicon wafers were locally irradiated by laser pulses. The focus was set on the investigation of the ablation mechanisms. Thereby, an ultra-short laser source (pulse duration 10 ps, wavelength 532nm, Gaussian profile) was used. The irradiated areas were investigated by electron...
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