p-Type conductive zinc oxide ZnO thin films can be prepared by codoping of Al–N using reactive magnetron sputtering technology. Two kinds of dopants, N 2 O and NH 3 , were used in the deposition processing together with oxygen. Upon codoping, the samples changed into p-type conductions from n-type ones with relatively good electrical properties. The best ZnO thin film obtained using NH 3 as the source of N shows a hole concentration of 1.32×10 18 cm −3 , a mobility of 0.05 cm 2 V −1 s −1 , and a resistivity of about 101 Ω cm. It was found that that the presence of Al facilitated the incorporation of N into ZnO.