The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiO x has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with −0.65GPa (x-direction stress), −0.22GPa (y-direction stress), and −0.21GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.