The energy transfer processes in Lu 2 SiO 5 :Ce 3+ luminescence was investigated through the temperature dependent luminescence under excitation with VUV–UV. Ce1 center emission peaking at 393 and 422nm and Ce2 center emission peaking at 462nm were observed. Ce2 center emission is enhanced with the temperature, which can be explained by the rate of energy transfer from Ce1 center increases when the temperature rises. The Ce1 emission shows the thermal quenching effect under the direct excitation of Ce 3+ at 262nm. However, under the interband excitation of 183nm, the Ce1 center emission exhibits undulating temperature dependence. This is because the emission is governed by thermal quenching and possible thermal enhancement of the transport of free carriers with the rising temperature.