Deep levels in Cd 0 . 8 Mn 0 . 2 Te doped with In and Al were studied with Deep Level Transient Spectroscopy. In In-doped Cd 0 . 8 Mn 0 . 2 Te, five electron traps were observed with activation energies of 0.23, 0.28, 0.38, 0.48 and 0.65eV. In the material doped with Al, three electron traps were found with activation energies equal to 0.33, 0.47 and 0.76eV. Metastable effects due to DX centers have been observed only for the In-doped samples. The value of binding energy for In-related DX center in Cd 0 . 8 Mn 0 . 2 Te obtained experimentally was found to be equal to 0.18eV.