This report describes the molecular design of precursors for the solid state deposition of thin films on semiconductor surfaces. These complexes form uniform photosensitive amorphous films on silicon chips by spin coating. Thin metallic films have been generated by the photochemical reactions of thin films of organometallic complexes. The ultimate product films formed in this process have been characterized by Auger spectroscopy. In addition, the mechanisms of the photoreactions have been studied by FTIR spectroscopy. In an air atmosphere these film photolytically yield pure metal oxide films. Films containing more than one transition metal may be photochemically produced from films containing mixtures of different metal-precursor complexes. While the above mechanistic studies were conducted with mercury lamps, we have also explored the use of both lasers (HeCd) and electron beams to pattern the materials. In this report these preliminary electron beam results will be discussed along with the mechanistic implications.