A 130nm 1Mb embedded phase change memory (PCM) has been achieved, requiring only three additional masks for phase change storage element, featuring 500kb/s single channel write throughput and>10 8 endurance. The prepare process has been optimized to reduce the cost and power. An 80nm heat electrode has been prepared with 130nm process. The optimal Read/Write circuit module is designed to realize the load/store function for PCM. The critical operation parameter is Reset/70ns/2.5mA and Set/1500ns/1mA, which means that the signal channel write throughput arrives to 500kb/s.