The effect of the substrate temperature on the optoelectronic properties of ZnO-based thin films prepared by rf magnetron sputtering has been studied. Three different targets (Zn/Al 98/2 at%, ZnO:Al 98/2 at% and ZnO:Al 2 O 3 98/2 wt%) have been investigated in order to compare resulting samples and try to reduce the substrate temperature down to room temperature. From the ZnO:Al 2 O 3 target, transparent conductive zinc oxide has been obtained at 25°C with the average optical transmission in the 400-800 nm wavelength range, T = 80-90% and resistivity, ρ = 3-5 10 - 3 Ωcm. In Al:ZnO layers, the spatial distribution of the electrical properties across the substrate placed parallel to the target has been improved by depositing at high substrate temperatures, above 200°C. Besides, owing to diffusion processes of CuInSe 2 and CdS take place at 200°C, an Al:ZnO/CdS/CuInSe 2 polycrystalline solar cell made with the Al:ZnO deposited at 25°C as the transparent conductive oxide, has shown a more efficient photovoltaic response, η = 6.8%, than the one measured when the aluminium-doped zinc oxide has been prepared at 200°C, η = 1.8%.