In this work, heteroepitaxy of InGaP on Si substrate with a GaAs buffer layer grown by metalorganic chemical vapor deposition is investigated. An InGaP p/n junction light emitting diode (LED) with electroluminescence linewidth of 65 meV and peak wavelength at 652 nm under 30 mA injection current has been fabricated. The feasibility of an InGaP LED integrated with Si electronics on Si substrates is demonstrated.