N-doped p-type ZnO films have been synthesized on α-Al 2 O 3 (0001) substrate by solid-source chemical vapor deposition using Zn(CH 3 COO) 2 .2H 2 O as the precursor and CH 3 COONH 4 as the nitrogen source. The properties for ZnO films are dependent greatly on the growth conditions. Results show that the best electrical properties of the p-type film, such as carrier density N=9.8x10 1 7 cm - 3 , resistivity ρ=20Ωcm and Hall mobility μ=0.97cm 2 /Vs, were induced at the substrate temperature of 500 o C with a precursor temperature of 250 o C and a nitrogen source of 150 o C, under which the highest mixed orientation for (100) and (110) planes of films was also achieved. The p-type ZnO films possess a transmittance of about 90% in visible region and a band gap of about 3.20eV at room temperature.