The formation of single-domain Si(001)4x3-In surfaces with several degrees of domain ratio is reported. A single-domain Si(001)2x1 surface was used as a substrate. A single-domain Si(001)3x4-In surface with a good domain ratio is found, the directional relationship of which is such that the threefold direction of 3x4-In corresponds to the twofold direction of substrate. Two other 4x3-In surfaces with poor domain ratios are found, the directional relationship of which is such that the fourfold direction corresponds to the twofold direction of substrate. The formation of these 4x3-In surfaces is explained by the electromigration of surface Si, the amount of which is dependent on the temperature of direct current annealing.