Thin films of polycrystalline AgInS 2 were deposited on indium–tin oxide glass substrates by chemical bath deposition process. Various dipping cycles (1, 2, 3, 4 and 5) were taken into consideration. The influence of dipping cycle on structural, optical, electrical and photoelectrochemical characteristics of the AgInS 2 thin films were investigated. The X-ray diffraction patterns indicated that all the samples revealed single phase of orthorhombic AgInS 2 with polycrystalline structure. The thickness of samples in a range of 0.82–2.67μm analyzed by α-step instrument. The optical band gap of all AgInS 2 films were 1.94eV calculated by transmittance spectra, respectively. All the samples revealed n-type semiconductor behaviors by Hall measurement. The carrier concentrations, mobility and resistivity of the AgInS 2 films at room temperature were in the range of 10 12 –10 15 cm −3 , 1.9–15cm 2 V −1 s −1 and 10 3 –10 5 Ωcm, respectively. We found that the dipping 3 cycles AgInS 2 film had a better photoelectrochemical performance with photocurrent density of 3.50mA/cm 2 bias 0.5V vs. SCE reference electrode under a 300W Xe lamp illumination with the intensity of 100mW/cm 2 . This value was about 3 times higher than the dipping 5 cycles AgInS 2 film. Observed higher photocurrent density was likely due to a suitable thickness, higher carrier mobility and lower charge transfer resistance.