We have evaluated the orientation dependence in chemical anisotropic etching of single-crystal silicon. Etch rates for a number of crystallographic orientations have been measured for a wide range of etching conditions, including KOH concentrations of 30 to 50% and temperatures of 40 to 90°C. Though the etchants all consist of the same components KOH and water, the orientation dependence varies considerably with change in etchant temperature and concentration. The resulting etch-rate database allows numerical prediction of etch profiles of silicon, necessary for the process design of microstructures. Changing the KOH concentration yields different etch profiles both analytically and experimentally.