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Contamination during localized etching using a 30 keV Ga + focused ion beam (FIB) has been investigated using a 300 keV Be 2+ nuclear microprobe with a beam spot size of 80 nm. Residual Ga atoms after processing were analyzed using micro-RBS and RBS images with an energy window corresponding to Ga atoms. The contamination of Ga was found at and nearby the bottom of the sputtered areas. Detected Ga atoms were considered to be partly due to the implanted atoms at the bottom of the sputtered area and partly due to the redeposition of the Ga FIB near the processed area.