The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A scanning force microscope tester has shown its operational capability in device internal electrical potentials measurements with both submicron and gigahertz resolution. In this paper we present a comparison of experimental results obtained by a scanning force microscope (SFM) test system and a numerical approach of the local electrical field distribution between a cone-shaped tip and sample based on the finite difference method. The tip-geometry is modelled taking the geometry obtained from a microimage into account. The simulation is carried out by sequentially moving the tip and calculating the reasonable field components. This model yields high accuracy in the prediction of voltage contrast measurements obtained with a SFM.