Nanoscale size definition and flexible device structures are presently among the most ambitious development goals in the semiconductor field. One approach to attain these goals is based on the use of hybrid structures, combining the flexible etched ion track templates as substrates with the device functions of filled inorganic semiconductor.It is a critical issue to determine precisely the moment of breakthrough in order to use the etched ion track templates to fabricate vertical nano electronic device.This study tries to shed some light upon these processes by means of a novel approach, the so-called capacitometry measurement for investigating the breakthrough moment and etching processes. It is shown that the capacitometry is a simple but quite reliable technique to determine precisely the moment of track etching breakthrough.