The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Adjacent concaves are formed commonly on silicon carbide (SiC) MOS capacitor after time-dependent dielectric breakdown (TDDB). This paper describes the formation mechanism of the concave on the SiC MOS capacitor with aluminum gate electrode on thermally grown silicon dioxide gate dielectric by the dielectric breakdown. At the bottom of an approximately 450nm-deep concave, a stack structure of the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.